ChipFind - документация

Электронный компонент: MA4X193

Скачать:  PDF   ZIP
Switching Diodes
1
MA4X193
Silicon epitaxial planar type
Silicon epitaxial planar type
I Features
Mini type 4-pin package, contained four elements
Short reverse recovery time t
rr
Bridge diodes for surface mounting
Anode common + cathode common composite product
I Absolute Maximum Ratings T
a
= 25
C
1: Cathode 1
3: Anode 3
Anode 2
Cathode 4
2: Cathode 2, 3
4: Anode 1, 4
Mini Type Package (4-pin)
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
80
V
Repetitive peak reverse voltage
V
RRM
80
V
Average forward current
I
F(AV)
70
mA
Repetitive peak forward current
I
FRM
150
mA
Non-repetitive peak forward
I
FSM
250
mA
surge current
*
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
= 75 V
100
nA
Forward voltage (DC)
V
F
I
F
= 70 mA
1.2
V
Reverse voltage (DC)
V
R
I
R
= 100 A
80
V
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
15
pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V
10
ns
I
rr
= 0.1 I
R
, R
L
= 100
I Electrical Characteristics T
a
= 25
C
Internal Connection
Marking Symbol: M2Z
Note) * : t = 1 s
Note) 1. Rated input/output frequency: 100 MHz
2. * : t
rr
measuring circuit
4
3
1
2
2.8
+ 0.2
- 0.3
1.5
+ 0.25
- 0.05
0.65
0.15
0.65
0.15
0.5 R
1
2
4
3
0.95
0.95
1.9
0.2
0.6
+
0.1
-
0
1.1
+
0.2
-
0.1
0.8
0.4
0.2
0 to 0.1
0.16
+
0.1
-
0.06
0.4
+
0.1
-
0.05
0.2
0.4
+
0.1
-
0.05
1.45
0.1 to 0.3
0.5
2.9
+
0.2
-
0.05
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50
W.F.Analyzer
(SAS-8130)
R
i
= 50
t
p
= 2 s
t
r
= 0.35 ns
= 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100
10%
Input Pulse
Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Switching Diodes
2
I
F
V
F
C
t
V
R
I
R
T
a
V
F
T
a
I
R
V
R
MA4X193
10
-2
0
0.2
0.4
0.6
0.8
1.0
1.2
10
-1
1
10
10
2
10
3
Forward voltage V
F
(V)
Forward current I
F
(mA
)
T
a
= 150C
100
C
25
C
- 20C
I
F (surge)
t
W
4-1 and 4-3 pins (anode common) characteristics charts
10
-1
-40
0
40
80
120
160
200
1
10
10
2
10
3
10
4
Ambient temperature T
a
(
C)
Reverse current I
R
(nA
)
V
R
= 75 V
35 V
6 V
10
-1
0
20
40
60
80
100
120
1
10
10
2
10
3
10
4
Reverse voltage V
R
(V)
Reverse current I
R
(nA
)
T
a
= 150C
100
C
25
C
0.1
0.03
1
10
100
0.3
3
30
300
1 000
0.3
3
30
10
1
0.1
Pulse width t
W
(ms)
Forward surge current I
F(surge)
(A
)
t
W
Non repetitive
I
F(surge)
T
a
= 25C
0
1
2
3
4
5
6
7
8
0
20
40
60
80
100
120
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF
)
f
= 1 MHz
T
a
= 25C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-40
0
40
80
120
160
200
Ambient temperature T
a
(
C)
Forward voltage V
F
(V
)
I
F
= 100 mA
10 mA
3 mA
Switching Diodes
3
1-2 and 3-2 pins (cathode common) characteristics charts
MA4X193
10
-2
0
0.2
0.4
0.6
0.8
1.0
1.2
10
-1
1
10
10
2
10
3
Forward voltage V
F
(V)
Forward current I
F
(mA
)
T
a
= 150C
100
C
25
C
- 20C
I
F
V
F
C
t
V
R
I
R
T
a
V
F
T
a
I
R
V
R
I
F (surge)
t
W
1
-40
0
40
80
120
160
200
10
10
2
10
3
10
4
10
5
Ambient temperature T
a
(
C)
Reverse current I
R
(nA
)
V
R
= 75 V
35 V
6 V
0
1.2
1.0
0.8
0.6
0.4
0.2
0
20
40
60
80
100
120
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF
)
f
= 1 MHz
T
a
= 25C
0.1
0.03
1
10
100
0.3
3
30
300
1 000
0.3
3
30
10
1
0.1
Pulse width t
W
(ms)
Forward surge current I
F(surge)
(A
)
t
W
Non repetitive
I
F(surge)
T
a
= 25C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-40
0
40
80
120
160
200
Ambient temperature T
a
(
C)
Forward voltage V
F
(V
)
I
F
= 100 mA
10 mA
3 mA
1
0
20
40
60
80
100
120
10
10
2
10
3
10
4
10
5
Reverse voltage V
R
(V)
Reverse current I
R
(nA
)
T
a
= 150C
100
C
25
C