Switching Diodes
1
MA4X193
Silicon epitaxial planar type
Silicon epitaxial planar type
I Features
Mini type 4-pin package, contained four elements
Short reverse recovery time t
rr
Bridge diodes for surface mounting
Anode common + cathode common composite product
I Absolute Maximum Ratings T
a
= 25
C
1: Cathode 1
3: Anode 3
Anode 2
Cathode 4
2: Cathode 2, 3
4: Anode 1, 4
Mini Type Package (4-pin)
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
80
V
Repetitive peak reverse voltage
V
RRM
80
V
Average forward current
I
F(AV)
70
mA
Repetitive peak forward current
I
FRM
150
mA
Non-repetitive peak forward
I
FSM
250
mA
surge current
*
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
= 75 V
100
nA
Forward voltage (DC)
V
F
I
F
= 70 mA
1.2
V
Reverse voltage (DC)
V
R
I
R
= 100 A
80
V
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
15
pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V
10
ns
I
rr
= 0.1 I
R
, R
L
= 100
I Electrical Characteristics T
a
= 25
C
Internal Connection
Marking Symbol: M2Z
Note) * : t = 1 s
Note) 1. Rated input/output frequency: 100 MHz
2. * : t
rr
measuring circuit
4
3
1
2
2.8
+ 0.2
- 0.3
1.5
+ 0.25
- 0.05
0.65
0.15
0.65
0.15
0.5 R
1
2
4
3
0.95
0.95
1.9
0.2
0.6
+
0.1
-
0
1.1
+
0.2
-
0.1
0.8
0.4
0.2
0 to 0.1
0.16
+
0.1
-
0.06
0.4
+
0.1
-
0.05
0.2
0.4
+
0.1
-
0.05
1.45
0.1 to 0.3
0.5
2.9
+
0.2
-
0.05
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50
W.F.Analyzer
(SAS-8130)
R
i
= 50
t
p
= 2 s
t
r
= 0.35 ns
= 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100
10%
Input Pulse
Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A